E/p durability by using a sub-range of a full programming range

ABSTRACT

An instruction to perform an erase on a group of one or more memory cells is sent. An indication that the erasure of the group of memory cells is unsuccessful is received. In response to receiving the indication that the erasure of the group of memory cells is unsuccessful, the value of a voltage threshold, associated with the group of memory cells, is changed to a new voltage threshold and the new voltage threshold and identification information associated with the group of memory cells is stored.

CROSS REFERENCE TO OTHER APPLICATIONS

This application is a continuation of co-pending U.S. patent applicationSer. No. 13/295,973 (Attorney Docket No. LINKP026C2), entitled E/PDURABILITY BY USING A SUB-RANGE OF A FULL PROGRAMMING RANGE filed Nov.14, 2011 which is incorporated herein by reference for all purposes,which is a continuation of co-pending U.S. patent application Ser. No.13/018,152 (Attorney Docket No. LINKP026C1), entitled E/P DURABILITY BYUSING A SUB-RANGE OF A FULL PROGRAMMING RANGE filed Jan. 31, 2011 whichis incorporated herein by reference for all purposes, which is acontinuation of U.S. patent application Ser. No. 12/286,104 (AttorneyDocket No. LINKP026), entitled E/P DURABILITY BY USING A SUB-RANGE OF AFULL PROGRAMMING RANGE filed Sep. 26, 2008, now U.S. Pat. No. 7,903,462,which is incorporated herein by reference for all purposes, which claimspriority to U.S. Provisional Application No. 61/123,082 (Attorney DocketNo. LINKP026+), entitled E/P DURABILITY BY USING A SUB-RANGE OF A FULLPROGRAMMING RANGE filed Apr. 4, 2008 which is incorporated herein byreference for all purposes.

BACKGROUND OF THE INVENTION

Flash memory is a type of re-programmable, non-volatile storage andincludes NAND flash memory and NOR flash memory. NAND flash memory isused, for example, in memory cards and Universal Serial Bus (USB)“thumb” drives. NAND flash memory is programmed (i.e., written to) usingtunnel injection (also referred to as “tunneling in”) and is erasedusing tunnel release (also referred to as “tunneling out”). NAND flashmemory systems cannot be erased in a random access manner although theycan be programmed in a random access manner.

BRIEF DESCRIPTION OF THE DRAWINGS

Various embodiments of the invention are disclosed in the followingdetailed description and the accompanying drawings.

FIG. 1 is a diagram illustrating an embodiment of a NAND flash memorysystem.

FIG. 2 is a diagram illustrating an embodiment of a block.

FIG. 3 is a flowchart illustrating an embodiment of a process thatdetermines and stores a new voltage threshold.

FIG. 4 is a diagram illustrating an embodiment in which a voltagethreshold is increased after an unsuccessful erase operation.

FIG. 5 is a flowchart illustrating an embodiment of a process thatdetermines and stores a new voltage threshold and a new sub-range asappropriate.

FIG. 6 is a diagram illustrating an embodiment in which a voltagethreshold and sub-range are increased after an unsuccessful eraseoperation.

FIG. 7 is a flowchart illustrating an embodiment of a process fordetermining whether to use a new voltage threshold in the event anunsuccessful erase operation occurs.

FIG. 8 is a diagram showing an embodiment of a MLC system in which avoltage threshold and sub-range are changed to avoid performing an eraseoperation.

FIG. 9 is a diagram showing an embodiment of an SLC system in whicherase operations are avoided by changing a voltage threshold and asub-range.

FIG. 10 is a flowchart illustrating an embodiment of a process fordetermining whether to use a new voltage threshold in the event an eraseoperation is desired.

FIG. 11 is a diagram showing an embodiment of a MLC system that changesa voltage threshold and sub-range in response to increased noise in thesystem.

FIG. 12 is a diagram showing an embodiment of an SLC system in which avoltage threshold and sub-range are changed as noise increases.

FIG. 13 is a flowchart illustrating an embodiment of a process fordetermining whether to use a new voltage threshold in response toincreased noise.

FIG. 14 is a diagram showing an embodiment of a NAND flash memory systemwith memory chips that are able to be set by a controller.

DETAILED DESCRIPTION

The invention can be implemented in numerous ways, including as aprocess; an apparatus; a system; a composition of matter; a computerprogram product embodied on a computer readable storage medium; and/or aprocessor, such as a processor configured to execute instructions storedon and/or provided by a memory coupled to the processor. In thisspecification, these implementations, or any other form that theinvention may take, may be referred to as techniques. In general, theorder of the steps of disclosed processes may be altered within thescope of the invention. Unless stated otherwise, a component such as aprocessor or a memory described as being configured to perform a taskmay be implemented as a general component that is temporarily configuredto perform the task at a given time or a specific component that ismanufactured to perform the task. As used herein, the term ‘processor’refers to one or more devices, circuits, and/or processing coresconfigured to process data, such as computer program instructions.

A detailed description of one or more embodiments of the invention isprovided below along with accompanying figures that illustrate theprinciples of the invention. The invention is described in connectionwith such embodiments, but the invention is not limited to anyembodiment. The scope of the invention is limited only by the claims andthe invention encompasses numerous alternatives, modifications andequivalents. Numerous specific details are set forth in the followingdescription in order to provide a thorough understanding of theinvention. These details are provided for the purpose of example and theinvention may be practiced according to the claims without some or allof these specific details. For the purpose of clarity, technicalmaterial that is known in the technical fields related to the inventionhas not been described in detail so that the invention is notunnecessarily obscured.

FIG. 1 is a diagram illustrating an embodiment of a NAND flash memorysystem. In the example shown, the system includes NAND flash memorycontroller 100 and a plurality of memory chips 102 a-102 f. A firstgroup of memory chips (102 a-102 c) are on one I/O bus and a secondgroup of memory chips (102 d-102 f) are on another I/O bus. In thisparticular example, there are a total of N+M memory chips and each I/Obus connects M memory chips to controller 100. Each memory chip in thisexample includes a plurality of blocks. A block is one example of aportion of a NAND flash memory chip. In some configurations, there are˜2000 blocks per memory chip.

Controller 100 issues various commands or instructions along the I/Obuses. One example command includes programming (i.e., writing to) someaddress or location in a particular memory chip. Another example commandis an erase command. Other example commands include management orcontrol commands, such as changing or setting a register, variable, orother option associated with a memory chip. In some examples describedherein, an erase operation is only able to be performed at the blocklevel, whereas a program operation can be performed at a lower level(e.g., at the cell level).

In some embodiments, different components are manufactured by differentcompanies. For example, one company may manufacture memory chips 102a-102 f and another company may manufacture controller 100. In someembodiments, an I/O bus, pinout, registers, or other interface between amemory chip and a controller is standardized to make it easier forcomponents from different manufacturers to interoperate properly. Forexample, a NAND flash memory system may conform to the interfacespecified by the Open NAND Flash Interface Working Group (ONFI).

FIG. 2 is a diagram illustrating an embodiment of a block. A block isone example of a portion of a memory chip and there are a plurality ofblocks in a given memory chip. For example, memory chip 102 a of FIG. 1includes multiple blocks. In the figure shown, block 200 includes 64word lines arranged in rows. Each word line includes a plurality ofcells, such as cell 202 in word line 0. In this example, cell 202 is afloating gate transistor. In various embodiments, a block includes anynumber of word lines and any number of cells.

Data is stored in a NAND flash system by programming a cell to a voltagethreshold. In some embodiments, a cell stores a single bit ofinformation (i.e., there are two possible stored voltage levels); thisis referred to as single-level cell (SLC). In other embodiments, a cellis able to store multiple bits (i.e., there are more than two possiblestored voltage levels) and this is called multi-level cell (MLC).Although some examples described herein show SLC/MLC or a certain numberof bits, the techniques herein apply to any number of levels or bits.

When an erase operation is performed in a NAND flash system, thesmallest unit the operation can be performed on is a block. For example,an erase cannot be performed only on cell 202 or only on word line 0—allof block 200 must be erased.

One issue with NAND flash memory is the finite number of program-erasecycles. Erasing stresses a cell because of the relatively large voltagedifferences that are applied to the floating gate and the memory well toremove electron charge by Fouler-Nordheim Tunneling (FN Tunneling). Inthe case of SLC, the number of program-erase cycles may be approximately100,000 cycles. For MLC, the number of program-erase cycles may beapproximately 10,000 cycles. The actual number of program-erase cycles(sometimes referred to as a lifetime) may vary from cell to cell butonce that lifetime is reached for a cell, that cell fails. Typically, acell fails in that it cannot be properly erased. In some embodiments, amemory chip notifies a controller if there is an issue performing anerase or other operation. If too many cells in a block fail, acontroller may decide the block is no longer operational or otherwisecapable of storing information. The exact number of cells that causes ablock to be unusable may vary from configuration to configuration, butthe basic principle holds.

The following figure shows an embodiment of a process to extend thelifetime of a block and/or mitigate capacity loss from cell failures.

FIG. 3 is a flowchart illustrating an embodiment of a process thatdetermines and stores a new voltage threshold. In some embodiments, theprocess is performed by controller 100 of FIG. 1. In the example shown,the process operates on a block. In some embodiments, the process isrepeated or otherwise performed on all blocks in a NAND flash memorysystem. The example process shown relates to an erase operation andother processes (such as reading or writing) are able to be performedbut (for clarity) are not shown here.

At 300, a voltage threshold (Vthresh) is used in association with anerase operation. For example, after an erase operation, the erase isdetermined to be successful if the post-erasure voltage is less than thevoltage threshold. In some embodiments, all blocks in a given memorychip use the same initial voltage threshold. At 302, it is determinedwhether to use a new voltage threshold. In some embodiments, a newVthresh is used when one or more cells in a block can no longer beerased properly (e.g., indicated when the post-erasure voltage isgreater than a voltage threshold). In such embodiments, the decision at302 is based on whether an erase operation is successful. In someembodiments, some other criterion is used in making a decision at 302.

If it is determined to use a new voltage threshold at 302, a new Vthreshfor a block is determined at 304. Since a block is the smallest unit ina NAND flash memory system that can be erased (at least in thisexample), the new Vthresh applies for the block the process is operatingon. In some embodiments, one block uses one voltage threshold whileanother block uses another voltage threshold. In some embodiments, thenew voltage threshold is strictly greater than a previous voltagethreshold.

A new voltage threshold can be determined in a variety of ways. In someembodiments, a new voltage threshold is pre-determined. In such cases,it would be known ahead of time what the possible new voltage thresholdsare. In some embodiments, a new voltage threshold is determineddynamically or “on the fly” by (for example) measuring a voltage anddetermining a new voltage threshold based at least in part on thatmeasured voltage. These are some examples of how a new voltage thresholdis determined.

A new voltage threshold and ID of the corresponding block are stored at306. In various embodiments, an ID of a block is any value that uniquelyidentifies a block, such as address or location. In one example, an IDis in the form: <memory chip><die><plane><block>. In some embodiments,an ID or address is in some other form. Returning to the example of FIG.1, controller 100 stores the ID of the block and new voltage thresholdin any appropriate location or format. This enables controller 100 toknow which block uses which voltage threshold. In various embodiments, ablock ID and/or voltage threshold is/are stored in a register, in a NANDand/or in a DRAM, etc. Controller 100 stores and/or retrieves thisinformation as appropriate. In some embodiments, there is a defaultvoltage threshold and only exceptions to this default are stored.

After storing information at 306 or if is determined not to use a newvoltage threshold at 302, it is determined at 308 whether a block is inuse. If so, the voltage threshold value used is associated with an eraseoperation at 300. In some cases, this may be a new voltage thresholddetermined and stored at steps 304 and 306.

In some embodiments, information stored at step 306 is retrieved by acontroller prior to an access operation, such as reading or writing. Forexample, if N bytes of data are being written, a controller will need toknow the capacity of a particular block in embodiments where adjustingthe voltage threshold affects capacity. In some embodiments, acontroller accesses the stored information prior to reading so thatstored data can be properly read back. For example, the storedinformation may indicate the capacity and/or a maximum/minimum valuethat can be stored and the controller may need to know this in order fordata to be read back properly.

The following figures show some more detailed examples of the aboveprocess. In some embodiments, a new voltage threshold is used when anerase operation is unsuccessful. In some embodiments, a new voltagethreshold is used to avoid performing an erase operation. In someembodiments, lifetime can be extended at the expense of reduced storagecapacity when a new voltage threshold is used. In some embodiments,storage capacity remains the same when a new voltage threshold is used.The following are merely examples and the technique can be performed ina variety of ways.

FIG. 4 is a diagram illustrating an embodiment in which a voltagethreshold is increased after an unsuccessful erase operation. In thisexample, an MLC example is shown. In diagram 400, eight possible voltagevalues (V0 thru V7) can be stored and read back, corresponding to threebits of storage.

During an erase operation, a voltage differential is applied across eachcell. The initial voltage threshold in diagram 400 is between thevoltages V0 and V1 and V0 corresponds to an erased state. If a value ofV1, V2, . . . , or V7 is stored by a cell, the voltage returns to V0 ina successful erase. In systems described herein, the lowest level thaterasures are capable of being performed at is the block level. In someother systems, erasures can be performed at some other level (e.g.,smaller portions); the techniques described herein are still applicable.

A voltage threshold is used to test or determine whether an eraseoperation has been performed successfully. In the example of diagram400, the initial voltage threshold is between V0 and V1 (e.g., themidpoint). The post-erasure voltage of each cell is compared to avoltage threshold. If it is below the voltage threshold, then the eraseoperation is successful for that cell. Diagram 402 shows an unsuccessfulerase operation because some (in other embodiments, all) of thepost-erasure voltage (403) is greater than the threshold voltage. Insome embodiments, an unsuccessful erase operation is declared aftermultiple erase-test cycles have been performed.

In this example, the new voltage threshold is increased after anunsuccessful erase operation. Diagram 404 shows a new (increased)voltage threshold between V4′ and V5′ and new voltage values (V4′-V7′)that can be used to store information. In various embodiments, the newvoltage threshold is pre-determined (e.g., before the unsuccessful eraseoperation in diagram 402) or is determined on the fly (e.g., bymeasuring post-erasure voltage 403 and calculating a new voltagethreshold using the measurement of voltage 403). The new voltagethreshold is greater than the initial voltage threshold and V4′corresponds to the new erased state. In some embodiments, V4′ is thesame level as post-erasure voltage 403. In some embodiments, V4=V4′,V5=V5′, V6=V6′, and V7 =V7′. In some embodiments, V4!=V4′, V5!=V5′,V6!=V6′, and/or V7!=V7′.

In some embodiments, multiple cells in a given block must have a problembeing erased before a new voltage threshold is used. For example, someNAND flash memory systems are capable of handling some number of cellfailures in a single block. More generally, if a cell is referred to asa sub-portion and a block is referred to as a portion, it is determined(at least in this embodiment) to use a new voltage threshold if Nsub-portions within a given portion are unsuccessfully erased. Forexample, a voltage threshold is not changed unless 5 or more cellscannot be properly erased in that block.

As shown in this example, with the new voltage threshold, the capacityhas decreased from 8 values (i.e., 3 bits) to 4 values (i.e., 2 bits).In this example, the entire block uses the same voltage threshold, soall cells in the block are reduced from 3 bit capacity to 2 bitcapacity. However, other systems that do not use a new voltage thresholdwould declare the entire block unusable, so some capacity has beenretained. In some other embodiments, some other portion (e.g., besides ablock) uses the same voltage threshold. This may, for example, dependupon the structure of a particular NAND flash system.

In some cases, more than one cell in a given block cannot be erasedproperly. In some embodiments, a new voltage threshold in such cases isdetermined based on the largest or highest post-erasure voltage of theunsuccessfully erased cells. For example, if one cell can only be eraseddown to 3 V and another cell can only be erased down to 5 V, the newvoltage threshold is selected (e.g., from pre-defined levels) orotherwise determined (e.g., on the fly) based on the 5 V value.

In some embodiments, the process repeats if further erase operations areunsuccessful. For example, the process may be repeated where a thirdvoltage threshold is used and two possible voltage levels are stored(i.e., 1 bit capacity).

In this figure and other figures, a dome shape is used to indicatevoltage variations (e.g., due to noise). In a real-world device, a cellwill not perfectly store a voltage. For example, suppose two cells areinstructed to store a voltage of 0 V. One cell may store a value of 0.1V and the other cell may store a value of −0.1 V. Or, a given cell inone instance may store a value of 0.1 V and during a later instance maystore a value of −0.1 V. A wider dome shape is used to indicate greatervariation and/or greater noise. A perfect device capable of perfectlystoring a given voltage would represented by a straight, vertical line.

In some embodiments, another parameter in addition to the voltagethreshold is changed. The following figures describe some embodiments inwhich a sub-range is also changed when the voltage threshold is changed.

FIG. 5 is a flowchart illustrating an embodiment of a process thatdetermines and stores a new voltage threshold and a new sub-range asappropriate. In the example shown, the process is similar to that shownin FIG. 3 and the same reference numbers are used to indicatecorresponding steps.

A voltage threshold (Vthresh) is used in association with an eraseoperation at 300. At 302, it is determined whether to use a new voltagethreshold. As described in FIG. 3, various decisions or events can causethis to occur in various embodiments. In some embodiments, one or moreunsuccessful erase operations cause a new voltage threshold to be used.In some embodiments, it is determined to use a new voltage threshold toavoid performing an erase operation.

In this example, if it is determined to use a new voltage threshold at302, a new voltage threshold for a block is determined at 304 and thenew voltage threshold and ID of corresponding block are stored at 306.In addition, a new sub-range is determined for the block at 502 and thenew sub-range and ID of the corresponding block are stored at 504. At308 it is determined whether a block is still in use. If so, the (new)voltage threshold is used at 300.

In some embodiments, information associated with a sub-range is storedwith or in the same location as the voltage threshold. Alternatively, insome embodiments, sub-range information is not stored. For example, apage (or other portion of a NAND flash memory system) can be read outand a sub-range is determined dynamically based on an average read valueof all cells in the page. In such embodiments, a system is configured toread (and determine a sub-range) before programming or changing thestate to a next sub-range. For example, if there are N pre-definedsub-ranges, in such embodiments the system would read a page, determinewhich of the N pre-defined sub-ranges is being used and update thesystem as necessary to operate in the next sub-range state.

The following figure shows one example of using a new voltage thresholdand sub-range in the event one or more erase operations areunsuccessful.

FIG. 6 is a diagram illustrating an embodiment in which a voltagethreshold and sub-range are increased after an unsuccessful eraseoperation. In this figure, a SLC example is shown. In some embodiments,the technique is applied to a MLC system. In the example shown, sevenvoltage thresholds and seven corresponding sub-ranges are predefined.Diagram 600 shows an initial state. In this initial state, an initialvoltage threshold (Vthresh 0) of −2 V is used and an initial sub-range(sub-range 0) of (−2 V, 0 V) is used. In this example, a sub-rangeextends from a voltage threshold to some voltage ceiling. In someembodiments, a sub-range is defined differently (e.g., (−4 V, 0 V) inthe case of diagram 600).

In the event an unsuccessful erase operation occurs, the systemtransitions from the state shown in diagram 600 to the state shown indiagram 602. In some embodiments, multiple cells in a given block musthave problems being erased before a state change from diagram 600 to 602occurs. In diagram 602, a second voltage threshold (Vthresh 1) of −1 Vis used and a second sub-range (sub-range 1) of (−1 V, 1 V) is used.Vthresh 1=−1 V is acceptable in this example since the voltage after theunsuccessful erase operation (not shown) is sufficiently low enough tobe read back as an erased state when compared to a voltage threshold of−1 V. For example, a post-erasure voltage of −1.9 V works for athreshold voltage of −1 V. In some embodiments, if the post-erasurevoltage is too high, a higher voltage threshold and correspondingsub-range are used.

After 5 more unsuccessful erase operations occur, the system is in thestate shown in diagram 604. In this state, the voltage threshold(Vthresh 6) is equal to 4 V and the sub-range (sub-range 6) is from 4 Vto 6 V.

As shown in this example, the capacity remains the same as the systemprogresses through the states shown in diagrams 600, 602, and 604. Eachof the states shown has a 1 bit storage capacity. In contrast, in FIG. 5the entire storage capacity is used initially and capacity decreaseswith each state. In some applications, having a constant capacity isattractive since it simplifies the responsibilities of a controller(e.g., the controller does not need to determine how much capacity iscurrently available in a certain region and correspondingly how or whereto store information).

One advantage of the technique shown in this figure is an increasedlifetime. The voltage difference applied across the cells is smallerthan if the entire range were used initially (e.g., from −2 or −3 V to 5V). For example, suppose V0-V7 in FIG. 4 correspond to −2 V, −1 V, . . ., 5 V. In that example, the system may have to swing from 5 V (thehighest possible stored value) to −2 V (the erased state). In contrast,when using the initial sub-range shown in diagram 600, the voltageranges from −3 V to −1 V (i.e., the voltage swing or difference issmaller). Less charge needs to tunnel in during a program operation andtunnel out during an erase operation. As a result, less charge istrapped in the floating gate (a common cause of erase related failures).

Another benefit is the program time and erase time are reduced. With asmaller gap between the erase level and programmed levels, the programand erase time are reduced because less electron charge are injected toand removed from the floating gate. In applications where the writebandwidth requirement is high, a reduced program and/or erase time isdesirable.

FIG. 7 is a flowchart illustrating an embodiment of a process fordetermining whether to use a new voltage threshold in the event anunsuccessful erase operation occurs. In some embodiments, step 304 ofFIG. 3 is implemented as shown. In some other embodiments, some otherdecision process is used.

In the example shown, an indication regarding an unsuccessful eraseoperation is received at 700. For example, a memory chip may report anerase operation was unsuccessful. At 702, it is determined whether it ispossible to change a voltage threshold. For example, if the system is inthe state shown in diagram 604 of FIG. 6, it is not possible to increasethe voltage threshold further. If the system is in the state shown indiagrams 600 or 602, it is possible to increase the voltage threshold.In some embodiments, this decision is based on a post-erasure voltageand/or a maximum voltage at which a memory device is able to operate at.If it is possible, it is decided to use a new voltage threshold at 704.Otherwise, it is decided to not use a new voltage threshold at 706.

FIG. 8 is a diagram showing an embodiment of a MLC system in which avoltage threshold and sub-range are changed to avoid performing an eraseoperation. In the example shown, diagram 800 shows an initial sub-range(sub-range 0) of (−2 V, 1 V) and initial voltage threshold (Vthresh 0)of −2 V. In this figure, a 2-bit MLC example is shown and 4 possiblevoltages can be stored.

In this example, when an erase operation is desired, the system isconfigured to change the voltage threshold from −2 V to a value between2 V and 1 V and change the sub-range from (−2 V, 1 V) to (1.X V to 4.XV) where 1.X V indicates a value between 1 V and 2 V. Diagram 802 showsthe new voltage threshold and new sub-range. The new voltage thresholdis sufficiently large so that all of the possible programmed values indiagram 800 are perceived as being in an erased state when compared tothe new voltage threshold (Vthresh 1) in diagram 802. The device isperceived as being erased without having to stress the device bytunneling out charge.

In this particular example, a program step is not required when thesub-range and voltage threshold are changed from the state shown indiagram 800 to that shown in diagram 802. Alternatively, in someembodiments, a program operation is performed when changing from thestate shown in diagram 800 to the state shown in diagram 802 (e.g., sothat after the program step, erased state 1 is stored). In suchembodiments, the voltage is a known value (e.g., erased state 1) and notan unknown state (e.g., any one of the 4 possible voltages shown indiagram 800).

Once in the state shown in diagram 802, the next time an erase operationis desired, the erase operation is performed and the system changes fromthe state shown in diagram 802 to that shown in diagram 800. The storedvalue reverts to erased state 0 of diagram 800.

In this particular example, there is some margin between the maximumvoltage (i.e., the upper limit of sub-range 0) in diagram 800 and thevoltage threshold (Vthresh 1) in diagram 802. Although not shown in someother figures, in some embodiments, margin is included in determining anew voltage threshold and/or sub-range.

In the example shown, an erase operation is performed once for every twodesired erase operations. When in the state shown in diagram 800, anerase is avoided by changing to the state shown in diagram 802. When inthe state shown in diagram 802, an erase is performed if it is desired.By performing fewer erase operations the effective lifetime of a NANDflash memory system can be extended. In this particular example, thelifetime would be extended (at least) 2× since half of the desired eraseoperations are performed.

In some embodiments, a desired erase operation is indicated by aninterrupt, message, or other indication from an upper layer application,host, or other entity. For example, if a desired erase operation comesfrom a host in the form of an erase instruction, in this example forevery 2 erase instructions received from the host, 1 erase instructionis passed to a NAND I/O bus and/or NAND flash memory chips. In someembodiments, a controller manages the memory space and determines whenan erase is desired.

The following figure shows another example in which erase operations areavoided. In the following figure, an SLC example is shown.

FIG. 9 is a diagram showing an embodiment of an SLC system in whicherase operations are avoided by changing a voltage threshold and asub-range. In the example shown, the system begins in the state shown indiagram 900. In that example, the voltage threshold (Vthresh 0) is −2 Vand the sub-range (sub-range 0) is (−2 V, −1 V).

If an erase operation is desired, the system changes from the stateshown in diagram 900 to that shown in diagram 902. The new voltagethreshold (Vthresh 1) is −1 V and the new sub-range (sub-range 1) is (−1V, 0 V). In this example, no margin is used and the new voltagethreshold (Vthresh 1) equals the previous voltage maximum (−1 V). Insome other embodiments, margin is used.

In some embodiments, a program operation is performed when transitioningfrom the state shown in diagram 900 to the state shown in diagram 902 sothe voltage is at a known or consistent value (e.g., erased state 1). Insome other embodiments, no program operation is performed whentransitioning and whatever value was stored (e.g., a value between 31 3V and −2 V or a value between −2 V and −1 V) is kept.

After avoiding 6 more erase operations by transitioning through 6corresponding voltage threshold and sub-ranges, the system enters thestate shown in diagram 904. In this state, the voltage threshold(Vthresh 7) is 5 V and the sub-range (sub-range 7) is (5 V, 6 V). In theevent an erase is desired in this state, an erase operation is performedand the stored values (i.e., 4.X V or 5.X V) revert to erased state 0 ofdiagram 900. The system then transitions to diagram 900 and thecorresponding voltage threshold and sub-range.

In this example, 1 out of every 8 desired erase operations is performed.This increases the lifetime of a NAND flash memory system by at least 8×since fewer erasures are performed, causing less stress on the systemdue to erasing.

FIG. 10 is a flowchart illustrating an embodiment of a process fordetermining whether to use a new voltage threshold in the event an eraseoperation is desired. In some embodiments, step 304 of FIG. 3 isimplemented as shown. In some other embodiments, some other decisionprocess is used.

In the example shown, an indication that an erase operation is desiredis received at 1000. For example, it may be desired to store some otherdata at a given location or it may no longer be necessary to store somedata. At 1002, it is determined whether it is possible to change avoltage threshold. For example, when transitioning from the state shownin diagram 900 to that shown in diagram 902 of FIG. 9, it is possiblechange the voltage threshold because there are available, higher voltagethresholds the system can switch to. However, in the case of diagram 904of FIG. 9, it is not possible to change the voltage threshold. If it ispossible, it is decided to use a new voltage threshold at 1004.Otherwise, it is decided to not use a new voltage threshold at 1006.

In some embodiments, a voltage threshold is changed to accommodateadditional noise in a system. The following figures show some examples.

FIG. 11 is a diagram showing an embodiment of a MLC system that changesa voltage threshold and sub-range in response to increased noise in thesystem. In the example shown, noise increases in the system over time sothat the (stored) voltage varies more and more over time from an idealvoltage. The increased noise over time is reflected in the widths of thestored voltages. The width W0 of diagram 1100 is strictly less than W1of diagram 1102 which in turn is strictly less than W2 of diagram 1104.

In diagram 1100, the voltage threshold (Vthresh 0) is 1 V and thesub-range (sub-range 0) is (1 V, 3.X V), where 3.X V is a voltagebetween 3 V and 4 V. In diagram 1102, the noise has increased and thesystem has changed to the state shown in diagram 1102. In this state,the voltage threshold (Vthresh 1) is 0.X V (a voltage between 0 V and 1V) and the sub-range (sub-range 1) is (0.X V, 4 V). The noise increaseseven more and the system changes to the state shown in diagram 1104. Thevoltage threshold (Vthresh 2) is now 0 V and the sub-range (sub-range 2)is (0 V, 5 V).

In various embodiments, various techniques are used to determine when tochange a voltage threshold and/or sub-range based on noise. In someembodiments, the widths W0, W1, and W2 reflect or are otherwise relatedto a standard deviation, variance, or some other noise parameter. Insome embodiments, a standard deviation or other parameter is measured byprogramming known values, reading back the programmed values, andcalculating a noise parameter (e.g., standard deviation or variance)based on the read values. In some embodiments, if a noise parameter isgreater than a threshold, the voltage threshold and/or sub-range arechanged.

FIG. 12 is a diagram showing an embodiment of an SLC system in which avoltage threshold and sub-range are changed as noise increases. In theexample shown, the system begins in the state shown in diagram 1200. Thevoltage threshold (Vthresh 0) is between 0 V and 1 V and the sub-range(sub-range 0) is (0.X V, 2 V). In diagram 1200, the noise corresponds toa width of W0. Over time, the noise increases and W1>W0. To deal withthe additional noise, the system changes to the state shown in diagram1202 with a voltage threshold (Vthresh 1) between 0 V and 1 V and asub-range (sub-range 1) of (0.X V, 2.X V). The noise increases furtherfrom W1 to W2. The system again changes the sub-range and voltagethreshold and changes to the state shown in diagram 1204. In diagram1204, a voltage threshold (Vthresh 2) of 0.X V (a value between 0 V and1 V) and a sub-range (sub-range 2) of (0.X V, 3 V) are used.

As shown in the FIGS. 11 and 12, in some embodiments, a voltagethreshold decreases in value. Similarly, a sub-range (if used) can beadjusted in a variety of ways in various embodiments.

FIG. 13 is a flowchart illustrating an embodiment of a process fordetermining whether to use a new voltage threshold in response toincreased noise. In some embodiments, step 304 of FIG. 3 is implementedas shown. In some other embodiments, some other decision process isused.

In the example shown, an indication associated with increased noise isreceived at 1300. In some embodiments, a process monitors or otherwisemeasures a noise parameter in a system. For example, standard deviationor variance may be maintained and updated with values that are read backas part of the normal operation of a device. In the event the varianceor other noise parameter exceeds some threshold, a notification may besent. At 1302, it is determined whether it is possible to change avoltage threshold. If it is possible, it is decided to use a new voltagethreshold at 1304. Otherwise, it is decided to not use a new voltagethreshold at 1306.

In some embodiments, memory chips have various settings, parameters, orcontrols that can be set by a controller to adjust a voltage thresholdand/or sub-range. The following figure shows one example systemconfiguration in which a voltage threshold and/or a sub-range is able tobe adjusted as desired. In some embodiments, a system is configureddifferently than the example shown below.

FIG. 14 is a diagram showing an embodiment of a NAND flash memory systemwith memory chips that are able to be set by a controller. In theexample shown, a more detailed example of the system from FIG. 1 isshown. Controller 100 includes command assembler 1400, storage 1402,command queue 1404, and NAND interface 1406.

In this example, storage 1402 is used to stored information associatedwith voltage thresholds, sub-ranges (if used), and correspondingidentifiers (e.g., identifying the block or memory chip a particularvoltage threshold corresponds to). Storage 1402 is implemented invarious embodiments using a variety of tables, formats, lists,databases, NAND flash itself, or other data structures.

Command assembler 1400 is responsible for assembling commands. Thisincludes sending commands to command queue 1404 in a proper order orsequence. Command assembler 1400 accesses information stored in storage1402 to assemble a command. For example, one block may have a differentvoltage threshold than another block and this may require setting aparticular register or control to a proper value.

Commands are put into command queue 1404 by command assembler 1400. NANDinterface 1406 retrieves commands (in order) from command queue 1404 andparses them as appropriate and sends the output over the I/O bus to thememory chip(s). In some embodiments, multiple memory chip(s) receive agiven command and the target memory chip executes the command and theother memory chips ignore the command.

The particular parameter or control being set and/or the structure orformat of an assembled command may vary from embodiment to embodiment,for example depending upon the particular memory chip used. In someembodiments, commands put into command queue 1404 are generic and arenot chip-specific. In some embodiments, NAND interface 1406 translatesor parses the generic commands as necessary into the particular formator structure used by the memory chip. For example, one manufacturer mayhave commands in one format and another manufacturer may have commandsin another format. Or, the location or address of a particular controlor parameter may vary from chip to chip. In some cases, one type ofmemory chip has (sub) portions of a different size compared to anothermemory chip. For example, the size of a memory chip may be ˜2000 blocksfor one memory chip and ˜4000 blocks for another memory chip. In someembodiments, one type of memory chip has a different handshaking thananother type of memory chip.

Although the foregoing embodiments have been described in some detailfor purposes of clarity of understanding, the invention is not limitedto the details provided. There are many alternative ways of implementingthe invention. The disclosed embodiments are illustrative and notrestrictive.

What is claimed is:
 1. A method of managing memory, comprising: sending,from a controller, an instruction to perform an erase on a group of oneor more memory cells; receiving, at the controller, an indication thatthe erasure of the group of memory cells is unsuccessful; and inresponse to receiving the indication that the erasure of the group ofmemory cells is unsuccessful: using the controller to change the valueof a voltage threshold, associated with the group of memory cells, to anew voltage threshold; and using the controller to store the new voltagethreshold and identification information associated with the group ofmemory cells.
 2. The method of claim 1, wherein the indication is notgenerated unless at least two of the memory cells in the group of memorycells are unsuccessfully erased.
 3. The method of claim 1, whereinchanging the value of the voltage threshold includes increasing thevoltage threshold.
 4. The method of claim 1, wherein: the group ofmemory cells includes multi-level cell (MLC) memory; there is aplurality of voltage thresholds associated with the MLC memory; andchanging the value of the voltage threshold includes increasing at leastone of the plurality of voltage thresholds associated with the MLCmemory.
 5. The method of claim 1, wherein after the value of the voltagethreshold is changed to the new voltage threshold, an instruction toperform a read of the group of memory cells is performed using the newvoltage threshold.
 6. The method of claim 1, wherein the group of memorycells includes one or more of the following: NAND flash memory,single-level cell (SLC) memory, and multi-level cell (MLC) memory.
 7. Asystem for managing memory, comprising: a memory controller configuredto: send an instruction to perform an erase on a group of one or morememory cells; receive an indication that the erasure of the group ofmemory cells is unsuccessful; and in response to receiving theindication that the erasure of the group of memory cells isunsuccessful, change the value of a voltage threshold, associated withthe group of memory cells, to a new voltage threshold; and storageconfigured to store the new voltage threshold and identificationinformation associated with the group of memory cells.
 8. The system ofclaim 7, wherein the indication is not generated unless at least two ofthe memory cells in the group of memory cells are unsuccessfully erased.9. The system of claim 7, wherein the memory controller is configured tochange the value of the voltage threshold, including by: increasing thevoltage threshold.
 10. The system of claim 7, wherein: the group ofmemory cells includes multi-level cell (MLC) memory; is there is aplurality of voltage thresholds associated with the MLC memory; and thememory controller is configured to change the value of the voltagethreshold, including by: increasing at least one of the plurality ofvoltage thresholds associated with the MLC memory.
 11. The system ofclaim 7, wherein after the value of the voltage threshold is changed tothe new voltage threshold, an instruction to perform a read of the groupof memory cells is performed using the new voltage threshold.
 12. Thesystem of claim 7, wherein the group of memory cells includes one ormore of the following: NAND flash memory, single-level cell (SLC)memory, and multi-level cell (MLC) memory.
 13. The system of claim 7further comprising the group of memory cells.
 14. The system of claim13, wherein the group of memory cells is associated with a first deviceon an I/O bus and the memory controller is associated with a seconddevice on the I/O bus.
 15. A computer program product for managingmemory, the computer program product being embodied in a non-transitorycomputer readable storage medium and comprising computer instructionsfor: sending an instruction to perform an erase on a group of one ormore memory cells; receiving an indication that the erasure of the groupof memory cells is unsuccessful; and in response to receiving theindication that the erasure of the group of memory cells isunsuccessful: changing the value of a voltage threshold, associated withthe group of memory cells, to a new voltage threshold; and storing thenew voltage threshold and identification information associated with thegroup of memory cells.
 16. The computer program product of claim 15,wherein the indication is not generated unless at least two of thememory cells in the group of memory cells are unsuccessfully erased. 17.The computer program product of claim 15, wherein the computerinstructions for is changing the value of the voltage threshold includecomputer instructions for increasing the voltage threshold.
 18. Thecomputer program product of claim 15, wherein: the group of memory cellsincludes multi-level cell (MLC) memory; there is a plurality of voltagethresholds associated with the MLC memory; and the computer instructionsfor changing the value of the voltage threshold include computerinstructions for increasing at least one of the plurality of voltagethresholds associated with the MLC memory.
 19. The computer programproduct of claim 15, wherein after the value of the voltage threshold ischanged to the new voltage threshold, an instruction to perform a readof the group of memory cells is performed using the new voltagethreshold.
 20. The computer program product of claim 15, wherein thegroup of memory cells includes one or more of the following: NAND flashmemory, single-level cell (SLC) memory, and multi-level cell (MLC)memory.